NCE12P09S mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -12V,ID = -9A RDS(ON) < 22mΩ @ VGS=-2.5V RDS(ON) < 18mΩ @ VGS=-4.5V
* Advanced trench MOSFET process technology
* Ultra low on-resistance with low gat.
General Features
* VDS = -12V,ID = -9A RDS(ON) < 22mΩ @ VGS=-2.5V RDS(ON) < 18mΩ @ VGS=-4.5V
* Advanced trench.
The NCE1216 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.
General Features
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